JPH0136246B2 - - Google Patents

Info

Publication number
JPH0136246B2
JPH0136246B2 JP57001042A JP104282A JPH0136246B2 JP H0136246 B2 JPH0136246 B2 JP H0136246B2 JP 57001042 A JP57001042 A JP 57001042A JP 104282 A JP104282 A JP 104282A JP H0136246 B2 JPH0136246 B2 JP H0136246B2
Authority
JP
Japan
Prior art keywords
jig
reaction tube
thin film
hollow body
film production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57001042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58119631A (ja
Inventor
Sumio Mizuno
Tetsuo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP104282A priority Critical patent/JPS58119631A/ja
Publication of JPS58119631A publication Critical patent/JPS58119631A/ja
Publication of JPH0136246B2 publication Critical patent/JPH0136246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP104282A 1982-01-08 1982-01-08 薄膜生成装置 Granted JPS58119631A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP104282A JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP104282A JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS58119631A JPS58119631A (ja) 1983-07-16
JPH0136246B2 true JPH0136246B2 (en]) 1989-07-31

Family

ID=11490500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP104282A Granted JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS58119631A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458444U (en]) * 1990-09-28 1992-05-19

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657637B2 (ja) * 1987-02-19 1994-08-03 日本電気株式会社 気相成長装置
TW201016294A (en) * 2008-08-19 2010-05-01 Oerlikon Solar Ip Ag Trubbach Hot-trap assembly for trapping unreacted gas by-products using catalytically active surfaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458444U (en]) * 1990-09-28 1992-05-19

Also Published As

Publication number Publication date
JPS58119631A (ja) 1983-07-16

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